Towards a bio-inspired mixed-signal retinal processor

Published versio

Nano-power mixed-signal tunable edge-detection circuit for pixel-level processing in next generation vision systems

Accepted versio

Towards an Implantable Vestibular Prosthesis: The Surgical Challenges

Published versio

An Extended CMOS ISFET Model Incorporating the Physical Design Geometry and the Effects on Performance and Offset Variation

This paper presents an extended model for the CMOS-based ion-sensitive field-effect transistor, incorporating design parameters associated with the physical geometry of the device. This can, for the first time, provide a good match between calculated and measured characteristics by taking into account the effects of nonidealities such as threshold voltage variation and sensor noise. The model is evaluated through a number of devices with varying design parameters (chemical sensing area and MOSFET dimensions) fabricated in a commercially available 0.35-µm CMOS technology. Threshold voltage, subthreshold slope, chemical sensitivity, drift, and noise were measured and compared with the simulated results. The first- and second-order effects are analyzed in detail, and it is shown that the sensors' performance was in agreement with the proposed model

Spiking Chemical Sensor (SCS): A new platform for neuro-chemical sensing

Published versio